Anisotropic MoS2 Nanosheets Grown on Self-Organized Nanopatterned Substrates

被引:64
作者
Martella, Christian [1 ]
Mennucci, Carlo [2 ]
Cinquanta, Eugenio [1 ,5 ]
Lamperti, Alessio [1 ]
Cappelluti, Emmanuele [3 ,4 ]
de Mongeot, Francesco Buatier [2 ]
Molle, Alessandro [1 ]
机构
[1] CNR, IMM, Lab MDM, Via C Olivetti 2, I-20864 Agrate Brianza, MB, Italy
[2] Univ Genoa, Dipartimento Fis, Via Dodecaneso 33, I-16146 Genoa, Ge, Italy
[3] UOS Sapienza, CNR, ISC, I-00185 Rome, Italy
[4] Univ Roma La Sapienza, Dipartimento Fis, Ple Moro 2, I-00185 Rome, Italy
[5] Politecn Milan, Dipartimento Fis, Piazza L da Vinci 32, I-20133 Milan, Italy
关键词
2D materials; anisotropy; molybdenum disulfide; self-organized nanopatterning; transition metal dichalcogenides; CHEMICAL-VAPOR-DEPOSITION; LARGE-AREA; RAMAN-SPECTROSCOPY; UNIAXIAL STRAIN; ATOMIC LAYERS; PHASE GROWTH; NANORIBBONS; TRANSISTORS;
D O I
10.1002/adma.201605785
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Manipulating the anisotropy in 2D nanosheets is a promising way to tune or trigger functional properties at the nanoscale. Here, a novel approach is presented to introduce a one-directional anisotropy in MoS2 nanosheets via chemical vapor deposition (CVD) onto rippled patterns prepared on ion-sputtered SiO2/Si substrates. The optoelectronic properties of MoS2 are dramatically affected by the rippled MoS2 morphology both at the macro- and the nanoscale. In particular, strongly anisotropic phonon modes are observed depending on the polarization orientation with respect to the ripple axis. Moreover, the rippled morphology induces localization of strain and charge doping at the nanoscale, thus causing substantial redshifts of the phonon mode frequencies and a topography-dependent modulation of the MoS2 workfunction, respectively. This study paves the way to a controllable tuning of the anisotropy via substrate pattern engineering in CVD-grown 2D nanosheets.
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页数:6
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