Tuning the intersubband absorption in strained AlAsSb/InGaAs quantum wells towards the telecommunications wavelength range

被引：15
作者：
Cristea, P. [1 ]
Fedoryshyn, Y.
Holzman, J. F.
Robin, F.
Jaeckel, H.
Mueller, E.
Faist, J.
机构：
[1] ETH, Elect Lab, CH-8092 Zurich, Switzerland
[2] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland
[3] Univ Neuchatel, Dept Phys, CH-2000 Neuchatel, Switzerland
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 11期
关键词：
D O I：
10.1063/1.2400794
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the intersubband absorption in Si doped AlAsSb/InGaAs quantum wells (QWs) grown on InP substrates by molecular beam epitaxy. The investigated multiple QW structures contain strained In0.78Ga0.22As layers and additional AlAs layers for strain compensation. By varying the nominal QW width from 3 to 9 ML (monolayer) a minimum central absorption wavelength of 1.76 mu m is found for a 5 ML thick QW. Simulations of these experimental results using a self-consistent Schrodinger-Poisson solver show a deviation from the perfect squarelike potential caused by intermixing effects at the interfaces. These blurred interfaces are also revealed by transmission electron microscopy measurements. (c) 2006 American Institute of Physics.
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页数：3
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