Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

被引：6

作者：

Han, Xiuxun ^{[1
]}

Honda, Yoshio

Narita, Tetsuo

Yamaguchi, Masahito

Sawaki, Nobuhiko

机构：

[1] Nagoya Univ, Dept Elect, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Akasaki Res Ctr, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Venture Business Lab, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2007年 / 19卷 / 04期

关键词：

D O I：

10.1088/0953-8984/19/4/046204

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Magnetotransport measurements were performed on a series of AlxGa1-xN/GaN heterostructures with different Al compositions (x = 0.15, 0.20 and 0.30) at 4.2 K. Adopting a fast Fourier transform method, we analysed the Shubnikov de Hass oscillations due to the two-dimensional electron gas to derive the quantum scattering time (tau(q)). It was found that the quantum scattering time in the ground subband decreases with increasing Al composition: 0.194 ps (x = 0.15), 0.174 ps (x = 0.20) and 0.123 ps (x = 0.30), respectively. To discern the predominant scattering process, the scattering time limited by interface roughness, the residual impurity and the alloy disorder were investigated numerically by including inter-subband scattering. We found that enhanced interface roughness scattering dominates both the transport and quantum scattering time in the ground subband.

引用

页数：11

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