Contact resistance to SrRuO3 and La0.67Sr0.33MnO3 epitaxial films

被引：12

作者：

Abuwasib, Mohammad ^{[1
]}

Lee, Hyungwoo ^{[2
]}

Gruverman, Alexei ^{[3
]}

Eom, Chang-Beom ^{[2
]}

Singisetti, Uttam ^{[1
]}

机构：

[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

[2] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA

[3] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 24期

关键词：

FERROELECTRIC TUNNEL-JUNCTIONS; DRY ETCH DAMAGE; INDUCTIVELY-COUPLED PLASMA; THIN-FILMS; ELECTRORESISTANCE; HETEROSTRUCTURES; LA0.7SR0.3MNO3; STABILITY; POLARIZATION; SEGREGATION;

D O I：

10.1063/1.4938143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Contact resistance to the metallic oxide electrodes, SrRuO3 (SRO) and La0.67Sr0.33MnO3 (LSMO), is an important parameter that affects the ferroelectric tunnel junction (FTJ) device performance. We have systematically studied the contact resistance between metallic oxide electrodes (SRO, LSMO) and contact metal overlayers (Ti, Pt) after exposure to various processing environments. Specific contact resistivity (rho(c)) for Ti and Pt contact metals and the sheet resistance (R-sh) of the metallic oxides are measured after exposure to different reactive ion plasma process steps. Sheet resistance degradation was observed for both SRO and LSMO films after exposure to plasma treatment. Severe contact resistance degradation was observed for Ti contacts as compared to Pt after reactive ion etching on LSMO films. The effect of oxygen (O-2) plasma on LSMO was observed to be most severe with non-ohmic behavior with Ti contacts, which can affect the functionality of FTJ devices. Finally, the thermal stability of contacts was investigated, Pt contacts to SRO show low resistance ohmic behavior even after annealing at 900 degrees C, making it a suitable contact for FTJ devices. (C) 2015 AIP Publishing LLC.

引用

页数：5

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