Circuit modeling approach for quantum structured total internal reflection electro-optic switch and fabric

Ultra high-speed optical switches (< 10 ns) are more important in optical networks and optical computers. This paper analyzes the switching speed and insertion loss of (2 x 2) Total Internal Reflection (TIR) electro - optic switch in Multiple Quantum Well (MQW) and Quantum Dot (QD) structures using equivalent circuit model approach. Then extended to analyze the switching speed and insertion loss of switch fabric (Spanke Architecture). For the purpose of this study, AlGaAs/GaAs multiple quantum well structure of length 150 micrometer and width of 40 micrometer and InAs quantum dot of 100 X diameter are considered. This work is carried out with SABER Sketch (ver.4.2.3) package. It is found that the obtained switching speed of both quantum dot switch and fabric are improved by a factor of 1000 (from the order of nano seconds to femto seconds) and insertion loss reduced by a factor of 100 A(.) (from the order of dBm to dBmu) while comparing to quantum well switch and fabric. Also noticed that the operating speed of the switch fabric is relatively oscillatory when the number of switch fabric stage is less than four.