Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameters

被引:34
作者
Amirifar, Nooshin [1 ]
Larde, Rodrigue [1 ]
Talbot, Etienne [1 ]
Pareige, Philippe [1 ]
Rigutti, Lorenzo [1 ]
Mancini, Lorenzo [1 ]
Houard, Jonathan [1 ]
Castro, Celia [1 ]
Sallet, Vincent [2 ]
Zehani, Emir [2 ]
Hassani, Said [2 ]
Sartel, Corine [2 ]
Ziani, Ahmed [3 ]
Portier, Xavier [3 ]
机构
[1] Univ & INSA Rouen, UMR CNRS 6634, Grp Phys Mat, Ave Univ,BP 12, F-76801 St Etienne, France
[2] CNRS Univ Versailles St Quentin, GEMAC, F-78035 Versailles, France
[3] Univ Caen, UMR CEA CNRS ENSICAEN 6252, Ctr Rech Ions Mat & Photon CIMAP, F-14050 Caen, France
关键词
OPTICAL CHARACTERIZATIONS; FIELD EVAPORATION; NANOWIRES; OXIDE; IONIZATION; DEPOSITION; SUBSTRATE; DEVICES; ENERGY; MOCVD;
D O I
10.1063/1.4936167
中图分类号
O59 [应用物理学];
学科分类号
摘要
In the last decade, atom probe tomography has become a powerful tool to investigate semiconductor and insulator nanomaterials in microelectronics, spintronics, and optoelectronics. In this paper, we report an investigation of zinc oxide nanostructures using atom probe tomography. We observed that the chemical composition of zinc oxide is strongly dependent on the analysis parameters used for atom probe experiments. It was observed that at high laser pulse energies, the electric field at the specimen surface is strongly dependent on the crystallographic directions. This dependence leads to an inhomogeneous field evaporation of the surface atoms, resulting in unreliable measurements. We show that the laser pulse energy has to be well tuned to obtain reliable quantitative chemical composition measurements of undoped and doped ZnO nanomaterials. (C) 2015 AIP Publishing LLC.
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页数:10
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共 38 条
[1]   ELECTRONEGATIVITY VALUES FROM THERMOCHEMICAL DATA [J].
ALLRED, AL .
JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1961, 17 (3-4) :215-221
[2]   Investigation of wustite (Fe1-xO) by femtosecond laser assisted atom probe tomography [J].
Bachhav, M. ;
Danoix, R. ;
Danoix, F. ;
Hannoyer, B. ;
Ogale, S. ;
Vurpillot, F. .
ULTRAMICROSCOPY, 2011, 111 (06) :584-588
[3]   Taking advantage of luminescent lanthanide ions [J].
Bünzli, JCG ;
Piguet, C .
CHEMICAL SOCIETY REVIEWS, 2005, 34 (12) :1048-1077
[4]   Luminescence properties of Tb implanted ZnO [J].
Cetin, A. ;
Kibar, R. ;
Selvi, S. ;
Townsend, P. D. ;
Can, N. .
PHYSICA B-CONDENSED MATTER, 2009, 404 (20) :3379-3385
[5]   Laser assisted field evaporation of oxides in atom probe analysis [J].
Chen, Y. M. ;
Ohkubo, T. ;
Hono, K. .
ULTRAMICROSCOPY, 2011, 111 (06) :562-566
[6]   Atom Probe Tomography of Zinc Oxide Nanowires [J].
Dawahre, Nabil ;
Shen, Gang ;
Balci, Soner ;
Baughman, William ;
Wilbert, David S. ;
Harris, Nick ;
Butler, Lee ;
Martens, Rich ;
Kim, Seongsin Margaret ;
Kung, Patrick .
JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (05) :801-808
[7]   Doping limits in II-VI compounds - Challenges, problems and solutions [J].
Desnica, UV .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1998, 36 (04) :291-357
[8]   Role of Photoexcitation and Field Ionization in the Measurement of Accurate Oxide Stoichiometry by Laser-Assisted Atom Probe Tomography [J].
Devaraj, A. ;
Colby, R. ;
Hess, W. P. ;
Perea, D. E. ;
Thevuthasan, S. .
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2013, 4 (06) :993-998
[9]   Atom probe tomography evaporation behavior of C-axis GaN nanowires: Crystallographic, stoichiometric, and detection efficiency aspects [J].
Diercks, David R. ;
Gorman, Brian P. ;
Kirchhofer, Rita ;
Sanford, Norman ;
Bertness, Kris ;
Brubaker, Matt .
JOURNAL OF APPLIED PHYSICS, 2013, 114 (18)
[10]   Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate [J].
Duguay, S. ;
Ngamo, M. ;
Fazzini, P. F. ;
Cristiano, F. ;
Daoud, K. ;
Pareige, P. .
THIN SOLID FILMS, 2010, 518 (09) :2398-2401