Analysis of short-range tracks and large track fluences in CR-39 PNTD using atomic force microscopy

被引:19
作者
Johnson, C. E. [1 ]
Benton, E. R. [1 ]
Yasuda, N. [2 ]
Benton, E. V. [3 ]
机构
[1] Oklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA
[2] Natl Inst Radiol Sci, Chiba 260, Japan
[3] Univ San Francisco, Dept Phys, San Francisco, CA 94117 USA
关键词
ELLIPSES;
D O I
10.1016/j.radmeas.2009.10.080
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
The standard method of analysis used with CR-39 plastic nuclear track detector (PNTD)- chemical etching followed by visible light microscope scanning-is limited to fluences less than 10(5) cm(-2) and to particles of range similar to <8 mu m (the minimum bulk etch needed to enlarge a track sufficiently to be measured using visible light). At fluences above 10(5) cm(-2) the tracks begin to overlap, making analysis difficult. High-LET heavy nuclear recoil fragments often have ranges of 1-10 mu m and bulk etch >= 8 mu m results in over-etched tracks that are difficult to interpret. Both of these issues can be resolved by using a short etch (2-4 h 50 degrees C, 6.25 N NaOH) followed by atomic force microscopy (AFM) analysis. The dimensions of the post-etch tracks are typically a few hundred nanometers, a size within the resolution of an AFM. Because AFM provides a 3-D topographical map of the post-etch PNTD surface, there is more useful information contained in an AFM image than in a standard image of the post-etch CR-39 surface obtained using an optical microscope and CCD camera. We are developing a method based on AFM scanning, followed by matrix analysis (as opposed to image processing), which allows us to directly extract the relevant geometrical parameters of the tracks in an AFM image. This method is also amenable to automation. Progress in developing this method is illustrated with results from AFM analysis of CR-39 PNTD exposed to high fluences of energetic protons at the Loma Linda University Medical Center (LLUMC) Proton Therapy Facility. (C) 2009 Elsevier Ltd. All rights reserved.
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收藏
页码:742 / 745
页数:4
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