Decoherence due to electron-phonon scattering in semiconductor nanodevices

被引：0

作者：

Querlioz, Damien ^{[1
]}

Saint-Martin, Jerome ^{[1
]}

Dollfus, Philippe ^{[1
]}

机构：

[1] Univ Paris 11, CNRS, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, France

来源：

IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS | 2009年

关键词：

Wigner's function; Monte Carlo; decoherence; electron-phonon scattering; RTD; MOSFET; MONTE-CARLO; DG-MOSFETS; TRANSPORT;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In this paper we discuss the effect of decoherence induced by electron-phonon scattering at room temperature in nanoscale devices where quantum transport effects play an important role as the RTD and the nano-MOSFET. The analysis is carried out from results of quantum Monte Carlo simulation based on the Wigner's function formalism. It puts forward the scattering-induced localization of electrons and the transition between the quantum and the semi-classical transport regimes in RTD. At last, the backscattering theory in MOSFET is investigated in the context of decohrence.

引用

页码：25 / 28

页数：4

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