Ultrafast Ytterbium Doped INNOSLAB Amplifier with High Average Power

被引：0

作者：

Mans, T. ^{[1
]}

Russbueldt, P. ^{[1
]}

Weitenberg, J. ^{[2
]}

Rotarius, G. ^{[1
]}

Hoffmann, D. ^{[1
]}

Poprawe, R. ^{[1
,2
]}

机构：

[1] Rhein Westfal TH Aachen, Fraunhofer Inst Laser Technol, Steinbachstr 15, D-52074 Aachen, Germany

[2] Rhein Westfal TH Aachen Klinikum, Chair Laser Technol, D-52074 Aachen, Germany

来源：

2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A diode-pumped ytterbium doped INNOSLAB fs-amplifier with 400W output power was realized. The pulse duration of the output pulses was almost transform limited 682 fs for Yb:YAG at a pulse repetition rate of 76 MHz. This was achieved at room temperature without the use of any stretcher or compressor setup. (C) 2009 Optical Society of America

引用

页码：1025 / +

页数：2

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