Polycrystalline cubic silicon carbide photoconductive switch

被引：9

作者：

Sheng, SP

Spencer, MG

Tang, X

Zhou, PZ

Harris, GL

机构：

[1] School of Engineering, Howard University, Washington

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.605443

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first cubic silicon carbide (3C-SiC) photoconductive switches were fabricated from polycrystalline 3C-SiC, The switches had a dark resistivity of 10(6) Omega/cm. A breakdown held of 250 kV/cm and a peak photocurrent density of 10 kA/cm(2) through the switch were obtained, The ratio of off-resistance to on-resistance of the a-witch reached up to 10(5). The photocurrent had a pulse width as narrow as 15 ns. The trigger gain of the stitch was 4.7.

引用

页码：372 / 374

页数：3

共 7 条

[1] PICOSECOND OPTOELECTRONIC SWITCHING AND GATING IN SILICON [J].