Salt-assisted chemical vapor deposition of two-dimensional materials

被引:82
作者
Han, Wei [1 ]
Liu, Kailang [1 ]
Yang, Sanjun [1 ]
Wang, Fakun [1 ]
Su, Jianwei [1 ]
Jin, Bao [1 ]
Li, Huiqiao [1 ]
Zhai, Tianyou [1 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
salt-assisted; chemical vapor deposition; 2D materials; transition metal dichalcogenides; non-layered materials; LAYER MOTE2; GROWTH; HETEROSTRUCTURES; CRYSTAL; MOS2; FERROMAGNETISM; SEMICONDUCTORS; MONOLAYERS; WSE2; WS2;
D O I
10.1007/s11426-019-9525-y
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional (2D) materials with atomic thickness are promising candidates for the applications in future semiconductor devices, owing to their fascinating physical properties and superlative optoelectronic performance. Chemical vapor deposition (CVD) is considered to be an efficient method for large-scale preparation of 2D materials toward practical applications. However, the high melting points of metal precursors and the thermodynamics instabilities of metastable phases limit the direct CVD synthesis of plenty of 2D materials. The salt has recently been introduced into the CVD process, which proved to be effective to address these issues. In this review, we highlighted the latest progress in the salt-assisted CVD growth of 2D materials, including layered and non-layered crystals. Firstly, strategies of adding salts are summarized. Then, the salt-assisted growth of various layered materials is presented, emphasizing on the transition metal chalcogenides of stable and metastable phases. Furthermore, strategies to grow ultrathin non-layered materials are discussed. We provide viewpoints into the techniques of using salt, the effects of salt, and the growth mechanisms of 2D crystals. Finally, we offer the challenges to be overcome and further research directions of this emerging salt-assisted CVD technique.
引用
收藏
页码:1300 / 1311
页数:12
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