Backside-Illuminated GaN-on-Si Schottky Photodiodes for UV Radiation Detection

被引：23

作者：

Malinowski, Pawel E. ^{[1
,2
]}

John, Joachim ^{[1
]}

Duboz, Jean Yves ^{[3
]}

Hellings, Geert ^{[1
,2
]}

Lorenz, Anne ^{[1
,2
]}

Madrid, Juan Gabriel Rodriguez ^{[1
]}

Sturdevant, Charles ^{[1
]}

Cheng, Kai ^{[1
]}

Leys, Maarten ^{[1
]}

Derluyn, Joff ^{[1
]}

Das, Johan ^{[1
]}

Germain, Marianne ^{[1
]}

Minoglou, Kyriaki ^{[1
]}

De Moor, Piet ^{[1
]}

Frayssinet, Eric ^{[3
]}

Semond, Fabrice ^{[3
]}

Hochedez, Jean-Francois ^{[4
]}

Giordanengo, Boris ^{[4
]}

Mertens, Robert ^{[1
,2
]}

机构：

[1] IMEC VZW, Interuniv Microelect Ctr, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, B-3000 Louvain, Belgium

[3] CNRS, CRHEA, F-06560 Valbonne, France

[4] Royal Observ Belgium, B-1180 Brussels, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 12期

关键词：

AlGaN; backside illumination; extreme ultraviolet (EUV); Schottky photodiode; ultraviolet imaging;

D O I：

10.1109/LED.2009.2033722

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report on the fabrication of near-ultraviolet photodetectors based on gallium nitride (GaN) layers grown on a Si(111) substrate. Optoelectronic characterization was performed using front-side and backside illumination, the latter possible by locally etching the Si substrate under the detectors using reactive ion etching. The dark current after removal of the Si substrate decreased by two orders of magnitude to around 20 fA at -1 V for a 300-mu m-diameter Schottky photodiode. Responsivity at the cutoff wavelength (370 nm) was equal to 35 mA/W for the backside illumination. Detection at smaller wavelengths was not possible due to a nonoptimized layer stack. These first results do however illustrate the potential of backside-illuminated GaN-on-Si Schottky photodiodes in 2-D UV imagers.

引用

页码：1308 / 1310

页数：3

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