Ambipolar magneto-optical response of ultralow carrier density topological insulators

被引:4
|
作者
Chaudhuri, Dipanjan [1 ]
Salehi, Maryam [2 ,3 ]
Dasgupta, Sayak [1 ]
Mondal, Mintu [1 ,4 ]
Moon, Jisoo [2 ]
Jain, Deepti [2 ]
Oh, Seongshik [2 ]
Armitage, N. P. [1 ]
机构
[1] Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA
[2] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02138 USA
[4] Indian Assoc Cultivat Sci, Sch Phys Sci, Kolkata 700032, India
关键词
21;
D O I
10.1103/PhysRevB.103.L081110
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated the THz range magneto-optical response of ultralow carrier density films of Sb2Te3 using time-domain THz polarimetry. Undoped Sb2Te3 has a chemical potential that lies inside the bulk valence band. Thus, its topological response is masked by bulk carriers. However, with appropriate buffer-layer engineering and chemical doping, Sb2Te3 thin films can be grown with extremely low electron or hole densities. The ultralow carrier density samples show unusual optical properties and quantized response in the presence of magnetic fields. Consistent with the expectations for Dirac fermions, a quantized Hall response is seen even in samples where the zero field conductivity falls below detectable levels. The discontinuity in the Faraday angle with small changes in the filling fraction across zero is a manifestation of the parity anomaly in 2D Dirac systems with broken time reversal symmetry (TRS).
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页数:5
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