Micro-photoluminescence spectroscopy on metal precipitates in silicon

被引：45

作者：

Gundel, Paul ^{[1
]}

Schubert, Martin C. ^{[1
]}

Kwapil, Wolfram ^{[1
]}

Schoen, Jonas ^{[2
]}

Reiche, Manfred ^{[3
]}

Savin, Hele ^{[4
]}

Yli-Koski, Marko ^{[4
]}

Sans, Juan Angel ^{[5
]}

Martinez-Criado, Gema ^{[5
]}

Seifert, Winfried ^{[6
]}

Warta, Wilhelm ^{[1
]}

Weber, Eicke R. ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany

[2] Univ Freiburg, Freiburg Mat Res Ctr, D-79104 Freiburg, Germany

[3] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[4] Aalto Univ, Helsinki 02015, Finland

[5] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[6] Brandenburg Tech Univ Cottbus, IHP BTU Joint Lab, D-03046 Cottbus, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2009年 / 3卷 / 7-8期

关键词：

IRON;

D O I：

10.1002/pssr.200903221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Metallic impurities are detrimental to many silicon devices and limit the efficiency of multi crystalline silicon solar cells. Therefore they are a major subject of ongoing research. Photoluminescence spectroscopy is a promising technique for detecting precipitated metals in silicon because of its sensitivity to the minority carrier density and to specific types of defects; however the impact of impurities on the defect luminescence could not be clarified yet. In this letter we examine the role of micron-sized iron and copper precipitates in direct bonded wafers by micro-photoluminescence spectroscopy. Both kinds of precipitates are detectable by means of the reduced band-to-band luminescence. An element-specific effect on the defect luminescence is observed. The results are confirmed by X-ray fluorescence spectroscopy. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：230 / 232

页数：3

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