Polymer semiconductors have exhibited their perspective in flexible, stretchable, and wearable electronics, where high-performance polymer semiconductors are always expected for high device performance. Various directional alignment techniques have been put forward to enhance device performance. However, not all these techniques are suitable on flexible substrates. Solution-based deposition also suffers the risk of interface degradation between semiconducting/dielectric layers and therefore the degradation of device performance. A film transfer technique is one of promising measures to solve these problems. We developed a simple and reliable thermal release transfer technique to transfer well-aligned and centimeter-scaled polymer semiconducting film from rigid to flexible substrates. A friction-transferred polytetrafluoroethylene template on silicon was used to guide the anisotropic crystallization of organic semiconducting film. The semiconducting film was transferred onto a flexible substrate via thermal release tape whose adhesion was modulated by proper annealing treatment. The flexible device based on such transferred and well-aligned semiconducting film presented the largest carrier mobility of 1.02 cm(2) V-1 s(-1) and the largest on/off ratio of 2.6 x 10(4) than the other control devices. Bending measurements further proved that such devices presented good endurance on both tensile strain and bending cycling. As an example, an extended-gate organic transistor was developed as a proximity sensor to perceive the approach of a charged object.
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Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Chu, Ping-Hsun
;
Kleinhenz, Nabil
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Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Kleinhenz, Nabil
;
Persson, Nils
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Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Persson, Nils
;
McBride, Michael
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Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
McBride, Michael
;
Hernandez, Jeff L.
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Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Hernandez, Jeff L.
;
Fu, Boyi
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Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Appl Mat Inc, 3050 Bowers Ave, Santa Clara, CA 95054 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Fu, Boyi
;
Zhang, Guoyan
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Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Zhang, Guoyan
;
Reichmanis, Elsa
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Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
机构:
Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Chu, Ping-Hsun
;
Kleinhenz, Nabil
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h-index: 0
机构:
Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Kleinhenz, Nabil
;
Persson, Nils
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机构:
Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Persson, Nils
;
McBride, Michael
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h-index: 0
机构:
Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
McBride, Michael
;
Hernandez, Jeff L.
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h-index: 0
机构:
Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Hernandez, Jeff L.
;
Fu, Boyi
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Appl Mat Inc, 3050 Bowers Ave, Santa Clara, CA 95054 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Fu, Boyi
;
Zhang, Guoyan
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Zhang, Guoyan
;
Reichmanis, Elsa
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA