GaN/AlGaN intersubband optoelectronic devices

被引：87

作者：

Machhadani, H. ^{[1
]}

Kandaswamy, P. ^{[2
]}

Sakr, S. ^{[1
]}

Vardi, A. ^{[3
]}

Wirtmueller, A. ^{[2
]}

Nevou, L. ^{[1
]}

Guillot, F. ^{[2
]}

Pozzovivo, G. ^{[4
]}

Tchernycheva, M. ^{[1
]}

Lupu, A. ^{[1
]}

Vivien, L. ^{[1
]}

Crozat, P. ^{[1
]}

Warde, E. ^{[1
]}

Bougerol, C. ^{[2
]}

Schacham, S. ^{[3
]}

Strasser, G. ^{[4
]}

Bahir, G. ^{[3
]}

Monroy, E. ^{[2
]}

Julien, F. H. ^{[1
]}

机构：

[1] Univ Paris 11, UMR CNRS 8622, Inst Elect Fondamentale, F-91405 Orsay, France

[2] CEA, Equipe Mixte CEA CNRS Nanophys & Semicond, INAC SP2M PSC, F-38054 Grenoble 9, France

[3] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[4] Vienna Univ Technol, Zentrum Mikro & Nanostrukturen, A-1040 Vienna, Austria

来源：

NEW JOURNAL OF PHYSICS | 2009年 / 11卷

关键词：

QUANTUM-WELLS; MU-M; NONLINEAR SUSCEPTIBILITY; INFRARED PHOTODETECTOR; WAVELENGTH RANGE; ABSORPTION; DOTS; TRANSITIONS; RELAXATION; MODULATOR;

D O I：

10.1088/1367-2630/11/12/125023

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper reviews recent progress toward intersubband (ISB) devices based on III-nitride quantum wells (QWs). First, we discuss the specific features of ISB active region design using GaN/AlGaN materials, and show that the ISB wavelength can be tailored in a wide spectral range from near-to long infrared wavelengths by engineering the internal electric field and layer thicknesses. We then describe recent results for electro-optical waveguide modulator devices exhibiting a modulation depth as large as 14 dB at telecommunication wavelengths. Finally, we address a new concept of III-nitride QW detectors based on the quantum cascade scheme, and show that these photodetectors offer the prospect of high-speed devices at telecommunication wavelengths.

引用

页数：16

共 59 条

[1] Intersubband photoconductivity at 1.6 μm using a strain-compensated AlN/GaN superlattice -: art. no. 191102 [J].

Baumann, E ;

Giorgetta, FR ;

Hofstetter, D ;

Lu, H ;

Chen, X ;

Schaff, WJ ;

Eastman, LF ;

Golka, S ;

Schrenk, W ;

Strasser, G .

APPLIED PHYSICS LETTERS, 2005, 87 (19) :1-3

[2] Electrically adjustable intersubband absorption of a GaN/AlN superlattice grown on a transistorlike structure [J].

Baumann, Esther ;

Giorgetta, Fabrizio R. ;

Hofstetter, Daniel ;

Leconte, Sylvain ;

Guillot, Fabien ;

Bellet-Amalric, Edith ;

Monroy, Eva .

APPLIED PHYSICS LETTERS, 2006, 89 (10)

[3] Macroscopic polarization and band offsets at nitride heterojunctions [J].

Bernardini, F ;

Fiorentini, V .

PHYSICAL REVIEW B, 1998, 57 (16) :R9427-R9430

[4] OPTICAL AND STRUCTURAL-PROPERTIES OF III-V NITRIDES UNDER PRESSURE [J].

CHRISTENSEN, NE ;

GORCZYCA, I .

PHYSICAL REVIEW B, 1994, 50 (07) :4397-4415

[5] Growth of thin AllnN/GalnN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths [J].

Cywinski, G. ;

Skierbiszewski, C. ;

Fedunieiwcz-Zmuda, A. ;

Siekacz, M. ;

Nevou, L. ;

Doyennette, L. ;

Tchernycheva, M. ;

Julien, F. H. ;

Prystawko, P. ;

Krysko, M. ;

Grzanka, S. ;

Grzegory, I. ;

Presz, A. ;

Domagala, J. Z. ;

Smalc, J. ;

Albrecht, M. ;

Remmele, T. ;

Porowski, S. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (03) :1505-1509

[6] Cubic GaN/AlN multiple quantum well photodetector [J].

DeCuir, E. A., Jr. ;

Manasreh, M. O. ;

Tschumak, Elena ;

Schoermann, J. ;

Lischka, K. .

APPLIED PHYSICS LETTERS, 2008, 92 (20)

[7] GaN-based quantum dot infrared photodetector operating at 1.38μm [J].

Doyennette, L ;

Nevou, L ;

Tchemycheva, M ;

Lupu, A ;

Guillot, F ;

Monroy, E ;

Colombelli, R ;

Julien, FH .

ELECTRONICS LETTERS, 2005, 41 (19) :1077-1078

[8] Intersubband absorption in AlN/GaN/AlGaN coupled quantum wells [J].

Driscoll, Kristina ;

Bhattacharyya, Anirban ;

Moustakas, Theodore D. ;

Paiella, Roberto ;

Zhou, Lin ;

Smith, David J. .

APPLIED PHYSICS LETTERS, 2007, 91 (14)

[9] Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells [J].

Driscoll, Kristina ;

Liao, Yitao ;

Bhattacharyya, Anirban ;

Zhou, Lin ;

Smith, David J. ;

Moustakas, Theodore D. ;

Paiella, Roberto .

APPLIED PHYSICS LETTERS, 2009, 94 (08)

[10] QUANTUM CASCADE LASER [J].

FAIST, J ;

CAPASSO, F ;

SIVCO, DL ;

SIRTORI, C ;

HUTCHINSON, AL ;

CHO, AY .

SCIENCE, 1994, 264 (5158) :553-556

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