Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

被引：11
|
作者：
Dhawan, Tanuj [1 ]
Tyagi, Renu [2 ]
Bag, Rajesh Kumar [2 ]
Singh, Mahavir [2 ]
Mohan, Premila [2 ]
Haldar, T. [2 ]
Murlidharan, R. [2 ]
Tandon, R. P. [1 ]
机构：
[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India
[2] Solid State Phys Lab, Delhi 110054, India
来源：
NANOSCALE RESEARCH LETTERS | 2010年 / 5卷 / 01期
关键词：
Quantum dots; Ge substrate; InAs; Self-assembled; GAAS; LASERS; GE; QUALITY;
D O I：
10.1007/s11671-009-9439-y
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Self-assembled InAs quantum dots (QDs) were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 A degrees C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs). The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.
引用
收藏
页码：31 / 37
页数：7
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