A new process for the fabrication of silicon-on-insulator structures by using porous silicon

被引：8
作者：
Chang, CC
Chen, LC
机构：
[1] Department of Electrical Engineering, National Taiwan Ocean University, Keelung
来源：
MATERIALS LETTERS | 1997年 / 32卷 / 04期
关键词：
silicon on insulator; porous silicon;
D O I：
10.1016/S0167-577X(97)00047-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper proposes a simplified fabrication process of silicon on insulator (SOI) structures by means of the current density controlling (CDC) method to construct the SOI structure and thereby reducing the complexity of the SOI structure fabrication process in conventional integrated circuit (IC) fabrication.
引用
收藏
页码：287 / 290
页数：4
相关论文
共 12 条
[1]  
BUTTLER W, 1993, IEEE INT SOI C P PI
[2]  
CHANG SK, 1996, IEEE ELECT DEV LETT, V17, P22
[3]  
CHOI JH, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P645, DOI 10.1109/IEDM.1994.383327
[4]   Improvement of breakdown voltage in SOI n-MOSFET's using the gate-recessed (GR) structure [J].
Choi, JH ;
Park, YJ ;
Min, HS .
IEEE ELECTRON DEVICE LETTERS, 1996, 17 (04) :175-177
[5]  
COLINGE JP, 1991, SILICON INSULATOR TE
[6]  
COLINGE JP, 1987, IEEE T ELECT DEV, V10, P2173
[7]   HOT-ELECTRON-INDUCED DEGRADATION OF FRONT AND BACK CHANNELS IN PARTIALLY AND FULLY DEPLETED SIMOX MOSFETS [J].
CRISTOLOVEANU, S ;
GULWADI, SM ;
IOANNOU, DE ;
CAMPISI, GJ ;
HUGHES, HL .
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (12) :603-605
[8]  
EARON SS, 1978, IEEE T ELECT DEV EP, V25, P907
[9]   COMPARISON OF SOI VERSUS BULK PERFORMANCE OF CMOS MICROPOWER SINGLE-STAGE OTAS [J].
FLANDRE, D ;
EGGERMONT, JP ;
DECEUSTER, D ;
JESPERS, P .
ELECTRONICS LETTERS, 1994, 30 (23) :1933-1934
[10]   HOT-ELECTRON AND HOLE-EMISSION EFFECTS IN SHORT N-CHANNEL MOSFETS [J].
HOFMANN, KR ;
WERNER, C ;
WEBER, W ;
DORDA, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :691-699
12