Hole burning spectroscopy of InAs self-assembled quantum dots for memory application

被引：10

作者：

Sugiyama, Y

Nakata, Y

Muto, S

Awano, Y

Yokoyama, N

机构：

[1] Fujitsu Labs Ltd, Quantum Electron Devices Labs, Atsugi, Kanagawa 2430197, Japan

[2] Hokkaido Univ, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan

来源：

PHYSICA E | 2000年 / 7卷 / 3-4期

关键词：

quantum dot; spectral hole burning; homogeneous broadening;

D O I：

10.1016/S1386-9477(99)00366-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the two spectral holes in the photocurrent of InAs self-assembled quantum dots (SAQDs) embedded in a pin diode irradiated by two different lasers. The estimated homogeneous broadening (Gamma(h)) of 25 mu eV for InAs SAQDs implies the possibility of high-density multiple wavelength-domain optical memory with the ratio of inhomogeneous broadening to Gamma(h) larger than 3300, The dependence of writing power, electric field, and temperature on the Gamma(h) was also investigated using hole burning spectroscopy. The Gamma(h) broadened not only as the writing power increased over a few W/cm(2) but also as the applied field increased. The Gamma(h) showed linear dependence on temperature, and the spectral hole was observed up to 80 K. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：503 / 507

页数：5

相关论文

共 9 条

[1] PHONON-SCATTERING AND ENERGY RELAXATION IN 2-DIMENSIONAL, ONE-DIMENSIONAL, AND ZERO-DIMENSIONAL ELECTRON GASES [J].

BOCKELMANN, U ;

BASTARD, G .

PHYSICAL REVIEW B, 1990, 42 (14) :8947-8951

[2] SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS [J].

DREXLER, H ;

LEONARD, D ;

HANSEN, W ;

KOTTHAUS, JP ;

PETROFF, PM .

PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2252-2255

[3] RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS [J].

HATAMI, F ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BOHRER, J ;

HEINRICHSDORFF, F ;

BEER, M ;

BIMBERG, D ;

RUVIMOV, SS ;

WERNER, P ;

GOSELE, U ;

HEYDENREICH, J ;

RICHTER, U ;

IVANOV, SV ;

MELTSER, BY ;

KOPEV, PS ;

ALFEROV, ZI .

APPLIED PHYSICS LETTERS, 1995, 67 (05) :656-658

[4] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS [J].

MARZIN, JY ;

GERARD, JM ;

IZRAEL, A ;

BARRIER, D ;

BASTARD, G .

PHYSICAL REVIEW LETTERS, 1994, 73 (05) :716-719

[5] ON A POSSIBILITY OF WAVELENGTH-DOMAIN-MULTIPLICATION MEMORY USING QUANTUM BOXES [J].

MUTO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (2B) :L210-L212

[6] Temperature dependence of microscopic photoluminescence spectra of quantum dots and quantum wells [J].

Ota, K ;

Usami, N ;

Shiraki, Y .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 1998, 2 (1-4) :573-577

[7] Self-formed InGaAs quantum dot lasers with multi-stacked dot layer [J].

Shoji, H ;

Nakata, Y ;

Mukai, K ;

Sugiyama, Y ;

Sugawara, M ;

Yokoyama, N ;

Ishikawa, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (7B) :L903-L905

[8] Characteristics of spectral-hole burning of InAs self-assembled quantum dots [J].

Sugiyama, Y ;

Nakata, Y ;

Muto, S ;

Futatsugi, T ;

Yokoyama, N .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (05) :880-885

[9] Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode [J].

Sugiyama, Y ;

Nakata, Y ;

Muto, S ;

Horiguchi, N ;

Futatsugi, T ;

Awano, Y ;

Yokoyama, N .

ELECTRONICS LETTERS, 1997, 33 (19) :1655-1657