Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band

被引:27
作者
Huang, Yang [1 ,2 ,3 ]
Liu, Zhiqiang [1 ,2 ,3 ]
Yi, Xiaoyan [1 ,2 ,3 ]
Guo, Yao [1 ,2 ,3 ]
Yuan, Guodong [1 ,2 ,3 ]
Wang, Junxi [1 ,2 ,3 ]
Wang, Guohong [1 ,2 ,3 ]
Li, Jinmin [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China
[2] State Key Lab Solid State Lighting, Beijing 100083, Peoples R China
[3] Beijing Engn Res Ctr Third Generat Semicond Mat &, Beijing 100083, Peoples R China
来源
IEEE PHOTONICS JOURNAL | 2016年 / 8卷 / 05期
基金
中国国家自然科学基金;
关键词
GaN; isoelectronic doping; thermal quenching; ionization energy; LIGHT-EMITTING-DIODES; PHOTOLUMINESCENCE; DESIGN; SEMICONDUCTORS; FABRICATION;
D O I
10.1109/JPHOT.2016.2614900
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, isoelectronic doping with indium (In) in p-GaN is investigated on the basis of the thermal quenching of ultraviolet luminescence (UVL) band. A phenomenological rate-equation model is proposed as a nondestructive diagnostic technique to acquire the dopant ionization energy of p-GaN. In terms of this model, we analyze the evolution of the ionization energy of p-GaN samples grown with different trimethyindium flow rate and find that isoelectronic doping with appropriate In incorporation is able to significantly reduce the ionization energy of the acceptor from 245 to 112 meV, which are consistent with the results of the variable temperature Hall-effect measurements. The comparison between the samples' full width at half maximum of the UVL band indicates that excessive In incorporation will degenerate the conductivity of p-GaN.
引用
收藏
页数:7
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