Construction of coaxial ZnSe/ZnO p-n junctions and their photovoltaic applications

被引：3

作者：

Zhang, Xiwei ^{[1
]}

Meng, Dan ^{[1
]}

Hu, Dan ^{[1
]}

Tang, Zhenjie ^{[1
]}

Niu, Xiaoping ^{[1
]}

Yu, Fengjun ^{[1
]}

Ju, Lin ^{[1
]}

机构：

[1] Anyang Normal Univ, Coll Phys & Elect Engn, Anyang 455000, Henan, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 02期

基金：

中国国家自然科学基金;

关键词：

CORE-SHELL; NANOWIRES;

D O I：

10.7567/APEX.9.025201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Coaxial ZnSe/ZnO nanostructures were fabricated by coating a ZnO thin film on the surface of presynthesized p-type ZnSe 1D nanostructures by a sputtering method. Owing to the n-type behavior of ZnO resulting from intrinsic defects, coaxial ZnSe/ZnO p-n junctions were realized and showed a pronounced rectifying behavior. Photovoltaic devices based on the coaxial ZnSe/ZnO p-n junction showed a power conversion efficiency of 1.24% and a large open-circuit voltage of 0.87 V under UV light. The large bandgaps of ZnSe and ZnO and the high quality of the ZnSe/ZnO interface were considered to be related to the high performance of the devices. (C) 2016 The Japan Society of Applied Physics.

引用

页数：4

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