Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers

被引：37

作者：

Marinov, Daniil ^{[1
]}

de Marneffe, Jean-Francois ^{[1
]}

Smets, Quentin ^{[1
]}

Arutchelvan, Goutham ^{[1
]}

Bal, Kristof M. ^{[2
]}

Voronina, Ekaterina ^{[3
]}

Rakhimova, Tatyana ^{[3
]}

Mankelevich, Yuri ^{[3
]}

El Kazzi, Salim ^{[1
]}

Nalin Mehta, Ankit ^{[1
,4
]}

Wyndaele, Pieter-Jan ^{[1
,5
]}

Heyne, Markus Hartmut ^{[1
,2
,5
]}

Zhang, Jianran ^{[1
]}

With, Patrick C. ^{[1
,6
]}

Banerjee, Sreetama ^{[1
]}

Neyts, Erik C. ^{[2
]}

Asselberghs, Inge ^{[1
]}

Lin, Dennis ^{[1
]}

De Gendt, Stefan ^{[1
,5
]}

机构：

[1] IMEC Vzw, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Univ Antwerp, Dept Chem, Univ Pl 1, B-2610 Antwerp, Belgium

[3] Moscow MV Lomonosov State Univ, 1 Skobeltsyn Inst Nucl Phys, GSP-1 Leninskie Gori 1, Moscow 119234, Russia

[4] Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200F, B-3001 Leuven, Belgium

[5] Katholieke Univ Leuven, Dept Chem, Celestijnenlaan 200F, B-3001 Leuven, Belgium

[6] Leibniz Inst Surface Engn IOM, Permoserstr 15, D-04318 Leipzig, Germany

来源：

NPJ 2D MATERIALS AND APPLICATIONS | 2021年 / 5卷 / 01期

基金：

俄罗斯科学基金会;

关键词：

IRREVERSIBLE ADSORPTION; DENSITY; MOS2; PHOTOLUMINESCENCE; POLYMERS; GRAPHENE; SILICON; FILMS;

D O I：

10.1038/s41699-020-00197-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcogenides (TMDs). So far there is limited understanding of the cleaning of "monolayer" TMD materials. In this study, we report on the use of downstream H-2 plasma to clean the surface of monolayer WS2 grown by MOCVD. We demonstrate that high-temperature processing is essential, allowing to maximize the removal rate of polymers and to mitigate damage caused to the WS2 in the form of sulfur vacancies. We show that low temperature in situ carbonyl sulfide (OCS) soak is an efficient way to resulfurize the material, besides high-temperature H2S annealing. The cleaning processes and mechanisms elucidated in this work are tested on back-gated field-effect transistors, confirming that transport properties of WS2 devices can be maintained by the combination of H-2 plasma cleaning and OCS restoration. The low-damage plasma cleaning based on H-2 and OCS is very reproducible, fast (completed in a few minutes) and uses a 300 mm industrial plasma etch system qualified for standard semiconductor pilot production. This process is, therefore, expected to enable the industrial scale-up of 2D-based devices, co-integrated with silicon technology.

引用

页数：10

共 45 条

[41] Mechanisms of hydrogen atom interactions with MoS2monolayer [J].