Structure of Highly Porous Silicon Dioxide Thin Film: Results of Atomistic Simulation

被引：9

作者：

Grigoriev, F., V ^{[1
]}

Sulimov, V. B. ^{[1
]}

Tikhonravov, A., V ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, Res Comp Ctr, Moscow 119991, Russia

来源：

COATINGS | 2019年 / 9卷 / 09期

基金：

俄罗斯科学基金会;

关键词：

thin films; glancing angle deposition; refractive index; highly porous films; GLANCING ANGLE DEPOSITION; ANTIREFLECTION COATINGS; REFRACTIVE-INDEX; MORPHOLOGY;

D O I：

10.3390/coatings9090568

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The high-energy glancing angle deposition of silicon dioxide films with alternation of deposition angle is studied using classical atomistic simulation. Both slow and fast alternations are investigated. The growth of vertical tree-like columns and chevron-like regular structures is demonstrated under fast and slow alternations, respectively. Due to high porosity, the density of the deposited silicon dioxide films is reduced to 1.3 divided by 1.4 g/cm(3). This results in reduction of the refractive index to 1.3, which agrees with known experimental data. For slow continuous substrate rotation, formation of a helical structure is demonstrated.

引用

页数：8

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