Proton induced single event upset in 6 T SOISRAMs

被引：9
作者：
Liu, Harry Y. [1 ]
Liu, Michael S.
Hughes, Harold L.
机构：
[1] Honeywell Def & Space Syst, Plymouth, MN 55441 USA
[2] USN, Res Lab, Washington, DC 20375 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 06期
关键词：
heavy ion; proton; single event upset; upset cross section;
D O I：
10.1109/TNS.2006.886218
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a method to estimate the saturated proton upset cross section for 6 T SOI SRAM cells from layout and technology parameters. The calculated proton upset cross section based on this method is in good agreement with test results for our 6 T SOI SRAM cells processed using 0.15 and 0.35 mu m technologies.
引用
收藏
页码：3502 / 3505
页数：4
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