Modeling of processes of charge separation in a GaAs detector

被引：4

作者：

Ayzenshtat, AI

Tolbanov, OP

Vorobiev, AP

机构：

[1] Semicond Dev Res Inst, Sci & Prod State Enterprise, Tomsk 634050, Russia

[2] Siberian Phys Tech Inst, Tomsk, Russia

[3] Inst High Energy Phys, Sci State Ctr, Protvino, Russia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2002年 / 494卷 / 1-3期

关键词：

GaAs detector; charge separation; plasma time;

D O I：

10.1016/S0168-9002(02)01465-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The problem of charge separation in a GaAs detector has been solved by means of mathematical modeling. Dynamics of the process for a three-dimensional detector is described in this work in detail. It is shown that in case of interaction with alpha particles, the plasma time can reach several nanoseconds in a strong electric field. In a weak electric field the plasma time exceeds the charge carrier lifetime. The time of separation of charge carriers created by a gamma photon in a strong electric field is 100 ps. The results of calculation are confirmed by experimental data. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：199 / 204

页数：6

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