Adsorbate-mediated step transformations and terrace rearrangement of Si(100)-(2x1)

被引：4

作者：

Butera, R. E. ^{[1
]}

Suwa, Yuji ^{[2
]}

Hashizume, Tomihiro ^{[2
]}

Weaver, J. H. ^{[1
]}

机构：

[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[2] Hitachi Ltd, Adv Res Lab, Tokyo 1858601, Japan

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 19期

关键词：

adsorbed layers; adsorption; chlorine; density functional theory; diffusion; elemental semiconductors; etching; scanning tunnelling microscopy; silicon; surface phase transformations; surface structure; vacancies (crystal); VICINAL SI(001) SURFACES; ATOMIC-HYDROGEN; ADSORPTION; CHLORINE; PSEUDOPOTENTIALS;

D O I：

10.1103/PhysRevB.80.193307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy and density-functional theory have been combined to demonstrate structural transformations of steps of Si(100)-(2x1) induced by nondangling bond-terminated Cl adsorbates. We identify a stable, bridge-bonded step adsorption site and show that supersaturation facilitates the population of those sites, leading to rebonded atom etching, step retreat, and extensive terrace rearrangement from the diffusion of resultant atomic vacancy lines across the supersaturated surface. Similarities to H-Si(100) are briefly discussed.

引用

页数：4

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