Adsorbate-mediated step transformations and terrace rearrangement of Si(100)-(2x1)

被引：4

作者：

Butera, R. E. ^{[1
]}

Suwa, Yuji ^{[2
]}

Hashizume, Tomihiro ^{[2
]}

Weaver, J. H. ^{[1
]}

机构：

[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[2] Hitachi Ltd, Adv Res Lab, Tokyo 1858601, Japan

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 19期

关键词：

adsorbed layers; adsorption; chlorine; density functional theory; diffusion; elemental semiconductors; etching; scanning tunnelling microscopy; silicon; surface phase transformations; surface structure; vacancies (crystal); VICINAL SI(001) SURFACES; ATOMIC-HYDROGEN; ADSORPTION; CHLORINE; PSEUDOPOTENTIALS;

D O I：

10.1103/PhysRevB.80.193307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy and density-functional theory have been combined to demonstrate structural transformations of steps of Si(100)-(2x1) induced by nondangling bond-terminated Cl adsorbates. We identify a stable, bridge-bonded step adsorption site and show that supersaturation facilitates the population of those sites, leading to rebonded atom etching, step retreat, and extensive terrace rearrangement from the diffusion of resultant atomic vacancy lines across the supersaturated surface. Similarities to H-Si(100) are briefly discussed.

引用

页数：4

共 50 条

[11] Si2H6 Dissociative Chemisorption and Dissociation on Si(100)-(2x1) and Ge(100)-(2x1) [J].

Veyan, Jean-Francois ;

Choi, Heesung ;

Huang, Min ;

Longo, R. C. ;

Ballard, Josh B. ;

McDonnell, Stephen ;

Nadesalingam, Manori P. ;

Dong, Hong ;

Chopra, Irinder S. ;

Owen, James H. G. ;

Kirk, Wiley P. ;

Randall, John N. ;

Wallace, Robert M. ;

Cho, Kyeongjae ;

Chabal, Yves J. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (50) :24534-24548

[12] Selenium adsorption on Cs-covered Si(100) 2x1 surfaces [J].

Sotiropoulos, AK ;

Kamaratos, A .

SOLID STATE COMMUNICATIONS, 2004, 129 (10) :637-641

[13] Surface Hydrogenation of the Si(100)-2x1 and Electronic Properties of Silicon Dangling Bonds on the Si(100):H Surfaces [J].

Riedel, Damien .

ON-SURFACE ATOMIC WIRES AND LOGIC GATES, 2017, :1-24

[14] Atomic resolution imaging on Si(100)2x1 and Si(100)2x1:H surfaces with noncontact atomic force microscopy [J].

Yokoyama, K ;

Ochi, T ;

Yoshimoto, A ;

Sugawara, Y ;

Morita, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (2A) :L113-L115

[15] A study of Cs adsorption on Se-covered Si(100) 2x1 surfaces [J].

Sotiropoulos, AK ;

Kamaratos, M .

APPLIED SURFACE SCIENCE, 2004, 229 (1-4) :161-166

[16] Photoemission studies of the surface reactivity of thiophene on Si(100)-(2x1), Si(111)-(7x7) and Ge(100)-(2x1) [J].

Rousseau, GBD ;

Dhanak, V ;

Kadodwala, M .

SURFACE SCIENCE, 2001, 494 (03) :251-264

[17] Tetra-σ bonding adsorption of pyridine on Si(100)-2x1 [J].

Lee, Han-Koo ;

Kim, Ki-jeong ;

Kang, Tai-Hee ;

Kim, Sehun ;

Chung, J. W. ;

Kim, Bongsoo .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2008, 164 (1-3) :44-47

[18] The adsorption of alcohols on hydroxylated Si(100)-2x1 [J].

Bitzer, T ;

Richardson, NV ;

Schiffrin, DJ .

SURFACE SCIENCE, 1997, 382 (1-3) :L686-L689

[19] Surface chemistry of alkylsilanes on Si(100)2x1 [J].

Foster, M ;

Darlington, B ;

Scharff, J ;

Campion, A .

SURFACE SCIENCE, 1997, 375 (01) :35-44

[20] Surface reactions of monoethylgermane on Si(100)-(2x1) [J].

Keeling, LA ;

Chen, L ;

Greenlief, CM .

SURFACE SCIENCE, 1998, 400 (1-3) :1-10

← 1 2 3 4 5 →