Effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy

被引：2
|
作者：
Soltani, S. [1 ]
Bouzidi, M. [1 ]
Chine, Z. [1 ]
Toure, A. [2 ]
Halidou, I. [3 ]
El Jani, B. [1 ]
Shakfa, M. K. [4 ,5 ,6 ]
机构：
[1] Univ Monastir, Fac Sci, URHEA, Monastir 5000, Tunisia
[2] Ecole Super Polytech, Inst Super Metiers Batiment Travaux Publ & Urbani, BP 4030, Nouakchott, Mauritania
[3] Abdou Moumouni Univ, Fac Sci & Technol, Dept Phys, BP10662, Niamey, Niger
[4] Philipps Univ Marburg, Dept Phys, Renthof 5, D-35032 Marburg, Germany
[5] Philipps Univ Marburg, Mat Sci Ctr, Renthof 5, D-35032 Marburg, Germany
[6] King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn CEMSE Div, Photon Lab, Thuwal 239556900, Saudi Arabia
来源：
THIN SOLID FILMS | 2017年 / 630卷
关键词：
Aluminum gallium nitride; Metal organic chemical vapor deposition; Photoreflectance spectroscopy; Time-resolved photoluminescence; ALGAN ALLOYS; PHOTOREFLECTANCE INVESTIGATIONS; SIN TREATMENT; GAN; HETEROSTRUCTURES; MOVPE; ELECTRON; FILMS; DEPOSITION; QUALITY;
D O I：
10.1016/j.tsf.2017.02.039
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG) while other growth parameters are kept constant. The optical properties of the AlxGa1-xN layers are studied by photoreflectance and time-resolved photoluminescence (TR-PL) spectroscopies. A degeneration in the material quality of the samples is revealed when the Al content is increased by increasing the TMA flow rate. When the TMG flow rate is decreased with a fixed TMA flow rate, the Al content of the AlxGa1-xN layers is increased and, furthermore, an improvement in the optical properties corresponding with an increase in the PL decay time is observed. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：2 / 6
页数：5
相关论文
共 50 条
  • [41] Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
    Sun, He Hui
    Guo, Feng Yun
    Li, Deng Yue
    Wang, Lu
    Wang, Dong Bo
    Zhao, Lian Cheng
    NANOSCALE RESEARCH LETTERS, 2012, 7 : 1 - 6
  • [42] Metal-organic hydride vapor phase epitaxy of AlxGa 1-xN films over sapphire
    Fareed, Qhalid
    Adivarahan, Vinod
    Gaevski, Mikhail
    Katona, Thomas
    Mei, Jin
    Ponce, Fernando A.
    Khan, Asif
    Japanese Journal of Applied Physics, Part 2: Letters, 2007, 46 (29-32):
  • [43] Effect of growth conditions on Si doping into InAlAs grown by metal-organic vapor phase epitaxy
    Goto, S
    Ueda, T
    Ohshima, T
    Kakinuma, H
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 119 - 122
  • [44] Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlxGa1-xN/AlN/GaN heterostructures
    Biyikli, N.
    Ozgur, U.
    Ni, X.
    Fu, Y.
    Morkoc, H.
    Kurdak, C.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (10)
  • [45] Optical properties of GaN epitaxial layers grown by low-pressure metalorganic vapor phase epitaxy under various growth conditions
    Shirakata, S
    Miyake, H
    Hiramatsu, K
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 109 - 112
  • [46] Si doping effects on the electrical and structural properties of high Al composition AlxGa1-xN films grown by MOCVD
    Cantu, P
    Keller, S
    Wu, F
    Waltereit, P
    Romanov, AE
    Mishra, UK
    Speck, JS
    DenBaars, SP
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2010 - 2013
  • [47] Influence of Al composition on electrical and structural properties of AlxGa1-xN/AlN/GaN HEMT materials grown by MOCVD
    Xing, Y.-H. (xingyanhui@bjut.edu.cn), 1646, Editorial Office of Chinese Optics (34):
  • [48] Growth and characterization of AlxGa1-xN via NH3-based metal-organic molecular beam epitaxy
    Billingsley, Daniel
    Henderson, Walter
    Pritchett, David
    Doolittle, W. Alan
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (05) : 1328 - 1332
  • [49] Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
    Hussein, A. S. H.
    Hassan, Z.
    Thahab, S. M.
    Ng, S. S.
    Abu Hassan, H.
    Chin, C. W.
    APPLIED SURFACE SCIENCE, 2011, 257 (09) : 4159 - 4164
  • [50] Dependence of Al incorporation on growth temperature during laser molecular beam epitaxy of AlxGa1-xN epitaxial layers on sapphire (0001)
    Tyagi, Prashant
    Ramesh, Ch
    Kushvaha, S. S.
    Mishra, Monu
    Gupta, Govind
    Yadav, B. S.
    Kumar, M. Senthil
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 739 : 122 - 128
12345