Effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy

被引:2
作者
Soltani, S. [1 ]
Bouzidi, M. [1 ]
Chine, Z. [1 ]
Toure, A. [2 ]
Halidou, I. [3 ]
El Jani, B. [1 ]
Shakfa, M. K. [4 ,5 ,6 ]
机构
[1] Univ Monastir, Fac Sci, URHEA, Monastir 5000, Tunisia
[2] Ecole Super Polytech, Inst Super Metiers Batiment Travaux Publ & Urbani, BP 4030, Nouakchott, Mauritania
[3] Abdou Moumouni Univ, Fac Sci & Technol, Dept Phys, BP10662, Niamey, Niger
[4] Philipps Univ Marburg, Dept Phys, Renthof 5, D-35032 Marburg, Germany
[5] Philipps Univ Marburg, Mat Sci Ctr, Renthof 5, D-35032 Marburg, Germany
[6] King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn CEMSE Div, Photon Lab, Thuwal 239556900, Saudi Arabia
关键词
Aluminum gallium nitride; Metal organic chemical vapor deposition; Photoreflectance spectroscopy; Time-resolved photoluminescence; ALGAN ALLOYS; PHOTOREFLECTANCE INVESTIGATIONS; SIN TREATMENT; GAN; HETEROSTRUCTURES; MOVPE; ELECTRON; FILMS; DEPOSITION; QUALITY;
D O I
10.1016/j.tsf.2017.02.039
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG) while other growth parameters are kept constant. The optical properties of the AlxGa1-xN layers are studied by photoreflectance and time-resolved photoluminescence (TR-PL) spectroscopies. A degeneration in the material quality of the samples is revealed when the Al content is increased by increasing the TMA flow rate. When the TMG flow rate is decreased with a fixed TMA flow rate, the Al content of the AlxGa1-xN layers is increased and, furthermore, an improvement in the optical properties corresponding with an increase in the PL decay time is observed. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:2 / 6
页数:5
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