Effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy

被引：2

作者：

Soltani, S. ^{[1
]}

Bouzidi, M. ^{[1
]}

Chine, Z. ^{[1
]}

Toure, A. ^{[2
]}

Halidou, I. ^{[3
]}

El Jani, B. ^{[1
]}

Shakfa, M. K. ^{[4
,5
,6
]}

机构：

[1] Univ Monastir, Fac Sci, URHEA, Monastir 5000, Tunisia

[2] Ecole Super Polytech, Inst Super Metiers Batiment Travaux Publ & Urbani, BP 4030, Nouakchott, Mauritania

[3] Abdou Moumouni Univ, Fac Sci & Technol, Dept Phys, BP10662, Niamey, Niger

[4] Philipps Univ Marburg, Dept Phys, Renthof 5, D-35032 Marburg, Germany

[5] Philipps Univ Marburg, Mat Sci Ctr, Renthof 5, D-35032 Marburg, Germany

[6] King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn CEMSE Div, Photon Lab, Thuwal 239556900, Saudi Arabia

来源：

THIN SOLID FILMS | 2017年 / 630卷

关键词：

Aluminum gallium nitride; Metal organic chemical vapor deposition; Photoreflectance spectroscopy; Time-resolved photoluminescence; ALGAN ALLOYS; PHOTOREFLECTANCE INVESTIGATIONS; SIN TREATMENT; GAN; HETEROSTRUCTURES; MOVPE; ELECTRON; FILMS; DEPOSITION; QUALITY;

D O I：

10.1016/j.tsf.2017.02.039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG) while other growth parameters are kept constant. The optical properties of the AlxGa1-xN layers are studied by photoreflectance and time-resolved photoluminescence (TR-PL) spectroscopies. A degeneration in the material quality of the samples is revealed when the Al content is increased by increasing the TMA flow rate. When the TMG flow rate is decreased with a fixed TMA flow rate, the Al content of the AlxGa1-xN layers is increased and, furthermore, an improvement in the optical properties corresponding with an increase in the PL decay time is observed. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：2 / 6

页数：5

共 42 条

[1] Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition [J].

Acar, S. ;

Lisesivdin, S. B. ;

Kasap, M. ;

Oezcelik, S. ;

Oezbay, E. .

THIN SOLID FILMS, 2008, 516 (08) :2041-2044

[2] Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy [J].

Agrawal, M. ;

Dharmarasu, N. ;

Radhakrishnan, K. ;

Ravikiran, L. .

THIN SOLID FILMS, 2012, 520 (24) :7109-7114

[3] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].

ASPNES, DE .

SURFACE SCIENCE, 1973, 37 (01) :418-442

[4] Effect of SiN treatment on GaN epilayer quality [J].

Benzarti, Z ;

Halidou, I ;

Boufaden, T ;

El Jani, B ;

Juillaguet, S ;

Ramonda, M .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (03) :502-508

[5] Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks [J].

Bethoux, JM ;

Vennéguès, P ;

Natali, F ;

Feltin, E ;

Tottereau, O ;

Nataf, G ;

De Mierry, P ;

Semond, F .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) :6499-6507

[6] Growth and characterization of AlxGa1-xN via NH3-based metal-organic molecular beam epitaxy [J].

Billingsley, Daniel ;

Henderson, Walter ;

Pritchett, David ;

Doolittle, W. Alan .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (05) :1328-1332

[7] Photoreflectance studies of (A1)Ga- and N-face AlGaN/GaN heterostructures [J].

Buchheim, C ;

Winzer, AT ;

Goldhahn, R ;

Gobsch, G ;

Ambacher, O ;

Link, A ;

Eickhoff, M ;

Stutzmann, M .

THIN SOLID FILMS, 2004, 450 (01) :155-158

[8] A study of parasitic reactions between NH3 and TMGa or TMAI [J].

Chen, CH ;

Liu, H ;

Steigerwald, D ;

Imler, W ;

Kuo, CP ;

Craford, MG ;

Ludowise, M ;

Lester, S ;

Amano, J .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (06) :1004-1008

[9] Temperature dependence of strain in Al0.22Ga0.78N/GaN heterostructures with and without Si3N4 passivation [J].

Chen, D. J. ;

Shen, B. ;

Zhang, K. X. ;

Tao, Y. Q. ;

Wu, X. S. ;

Xu, J. ;

Zhang, R. ;

Zheng, Y. D. .

THIN SOLID FILMS, 2007, 515 (10) :4384-4386

[10] Al concentration control of epitaxial AlGaN alloys and interface control of GaN/AlGaN quantum well structures [J].

Choi, SC ;

Kim, JH ;

Choi, JY ;

Lee, KJ ;

Lim, KY ;

Yang, GM .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :172-176

← 1 2 3 4 5 →