Optimized Kilowatt-Range Boost Converter Based on Impulse Rectification With 52 kW/l and 98.6% Efficiency

被引:9
作者
Jafari, Armin [1 ]
Nikoo, Mohammad Samizadeh [1 ]
van Erp, Remco [1 ]
Matioli, Elison [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Power & Wide Band Gap Elect Res Lab, CH-1015 Lausanne, Switzerland
基金
欧洲研究理事会;
关键词
Inductors; Schottky diodes; Silicon carbide; Power system measurements; Density measurement; Gallium nitride; Bandwidth; Boost; dc-dc; gallium nitride (GaN); high-frequency; high power density; impulse rectification; insulated-metal substrate printed circuit board (IMS PCB); optimum duty cycle control; silicon carbide (SiC); soft-switching; wide-bandwidth inductor;
D O I
10.1109/TPEL.2020.3045062
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Maximizing the efficiency and power density of dc-dc converters demands parallel optimizations in design and control, especially for variable-frequency converters operating over wide frequency ranges. This letter presents the full-scale optimization of a kilowatt-range megahertz-class boost converter based on the impulse rectification. To maximize the heat extraction from the converter and increase its power density, the entire power stage is implemented on a single-layer insulated-metal substrate. For high efficiencies over wide frequency ranges, high-performance gallium nitride transistors are employed and various high-frequency materials (MnZn, NiZn, and air) with different geometries are compared to realize a wide-bandwidth inductor. Silicon carbide Schottky diodes with a zero reverse recovery are utilized for efficient high-frequency rectification, and the impact of the device's current rating on its generated reactive power and the overall system efficiency are investigated at different power levels up to 1 kW. The proposed optimum duty cycle control maximizes the conversion efficiency at different gains and powers and prevents fatal device hard switching at high frequencies. The optimized converter enables a peak efficiency of 98.6% along with an ultrahigh power density of 52 kW/l (850 W/in(3)). A loss breakdown summarizes major efficiency bottlenecks to be overcome by future advances in power electronics.
引用
收藏
页码:7389 / 7394
页数:6
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