Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements

被引：39
|
作者：
Kordos, P. [1 ,2 ]
Stoklas, R. [2 ]
Gregusova, D. [2 ]
Gazi, S. [2 ]
Novak, J. [2 ]
机构：
[1] Slovak Tech Univ Bratislava, Dept Microelect, SK-81219 Bratislava, Slovakia
[2] Slovak Acad Sci, Inst Elect Engn, SK-84104 Bratislava, Slovakia
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 01期
关键词：
alumina; aluminium compounds; gallium compounds; III-V semiconductors; MOSFET; semiconductor heterojunctions; wide band gap semiconductors; GAN; AL2O3;
D O I：
10.1063/1.3275754
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Frequency dependent conductance measurements at varied temperature between 25 and 260 degrees C were performed to analyze trapping effects in the Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors. The trap states with a time constant tau(T,f)congruent to(0.1-1) mu s (fast) and tau(T,s)=10 ms (slow) were identified. The conductance measurements at increased temperatures made it possible to evaluate the fast trap states in about a four times broader energy range than that from room temperature measurement. The density of the fast traps decreased from 1.4x10(12) cm(-2) eV(-1) at an energy of 0.27 eV to about 3x10(11) cm(-2) eV(-1) at E-T=0.6 eV. The density of the slow traps was significantly higher than that of the fast traps, and it increased with increased temperature from about 3x10(12) cm(-2) eV(-1) at 25-35 degrees C to 8x10(13) cm(-2) eV(-1) at 260 degrees C.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Improved transport properties of Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor
    Kordos, P.
    Gregusova, D.
    Stoklas, R.
    Cico, K.
    Novak, J.
    APPLIED PHYSICS LETTERS, 2007, 90 (12)
  • [2] AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide
    Gregusova, D.
    Stoklas, R.
    Cico, K.
    Lalinsky, T.
    Kordos, P.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (08) : 947 - 951
  • [3] Transport properties of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with Al2O3 of different thickness
    Kordos, P.
    Gregusova, D.
    Stoklas, R.
    Gazi, S.
    Novak, J.
    SOLID-STATE ELECTRONICS, 2008, 52 (06) : 973 - 979
  • [4] Comparative study of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide
    Miyazaki, Eiji
    Goda, Yuji
    Kishimoto, Shigeru
    Mizutani, Takashi
    SOLID-STATE ELECTRONICS, 2011, 62 (01) : 152 - 155
  • [5] AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor with oxidized Ni as a gate insulator
    Oh, CS
    Youn, CJ
    Yang, GM
    Lim, KY
    Yang, JW
    APPLIED PHYSICS LETTERS, 2004, 85 (18) : 4214 - 4216
  • [6] Reactive sputtering of Al2O3 on AlGaN/GaN heterostructure field-effect transistor
    Jhin, J.
    Kang, H.
    Byun, D.
    Kim, D.
    Adesida, I.
    THIN SOLID FILMS, 2008, 516 (18) : 6483 - 6486
  • [7] GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO2 Gate Insulator on AlGaN/GaN Heterostructure
    Ao, Jin-Ping
    Nakatani, Katsutoshi
    Ohmuro, Keisuke
    Sugimoto, Masahiro
    Hu, Cheng-Yu
    Sogawa, Yuji
    Ohno, Yasuo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
  • [8] GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate
    Qingpeng Wang
    Jin-Ping Ao
    Pangpang Wang
    Ying Jiang
    Liuan Li
    Kazuya Kawaharada
    Yang Liu
    Frontiers of Materials Science, 2015, 9 : 151 - 155
  • [9] GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate
    Wang, Qingpeng
    Ao, Jin-Ping
    Wang, Pangpang
    Jiang, Ying
    Li, Liuan
    Kawaharada, Kazuya
    Liu, Yang
    FRONTIERS OF MATERIALS SCIENCE, 2015, 9 (02) : 151 - 155
  • [10] Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique
    Liao Xue-Yang
    Zhang Kai
    Zeng Chang
    Zheng Xue-Feng
    En Yun-Fei
    Lai Ping
    Hao Yue
    CHINESE PHYSICS B, 2014, 23 (05)
12345