Amplitude modulator circuit featuring TiO2 memristor with linear dopant drift

被引：31

作者：

Wey, T. A. ^{[1
]}

Benderli, S. ^{[1
]}

机构：

[1] Lafayette Coll, Acopian Engn Ctr, Dept Elect & Comp Engn, Easton, PA 18042 USA

来源：

ELECTRONICS LETTERS | 2009年 / 45卷 / 22期

关键词：

D O I：

10.1049/el.2009.2174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An amplitude modulation circuit architecture featuring a recently published titanium dioxide (TiO2) memristor is proposed. The circuit performance is analysed and simulated with the published physical memristor model under the condition of linear dopant drift. The simulated results demonstrate that the performance is well predicted by the mathematical analysis and supports the viability of the design.

引用

页码：1103 / U8

页数：2

共 5 条

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