Metalorganic chemical vapor deposition of group III nitrides - a discussion of critical issues

被引：75

作者：

Keller, S ^{[1
]}

DenBaars, SP

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 248卷

关键词：

doping; segregation; surface pocesses; surface structure; metalorganic chemical vapor deposition; nitrides;

D O I：

10.1016/S0022-0248(02)01867-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Metalorganic chemical vapor deposition (MOCVD) is recognized as the method of choice for the large-scale production of nitride based optoelectonic and electronic devices. (Al. Ga. In)N alloys with In and Al compositions below 40% have been intensively investigated for applications in light emitting and electronic devices, However. due to the difficulties in epitaxial growth, less attention was directed to the fabrication of materials with higher Al and In mole fractions. In this article. critical issues in the growth of (Al, Ga, In)N by MOCVD are discussed in relation to the diverse chemical properties of the group-III nitrides and their impact on the growth process. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：479 / 486

页数：8

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