Enhanced field emission properties of thin-multiwalled carbon nanotubes:: Role of SiOx coating

被引:21
作者
Moon, J. S. [1 ]
Alegaonkar, P. S.
Han, J. H.
Lee, T. Y.
Yoo, J. B.
Kim, J. M.
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
[2] Samsung SDI Co Ltd, Corp R&D Ctr, Yongin 449577, South Korea
关键词
D O I
10.1063/1.2384795
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the fabrication, characterization, and field emission properties of (silicon oxide) SiOx coated thin-multiwalled carbon nanotubes (t-MWNTs). The coated t-MWNTs show improved field emission behavior. Initially, raw t-MWNTs (diameter similar to 5-8 nm) were functionalized by acid treatment. Using spin on glass as a Si precursor, SiOx was coated on the nanotubes by routine chemical methods. The coated samples were characterized by high resolution transmission electron microscopy (HRTEM), Fourier transform infrared (FTIR) spectroscopy, and thermogravimetric analysis (TGA) techniques. The HRTEM results show that the local thickness of the coating varies from similar to 1 to 2 nm. The FTIR investigations show the formation of nanophases, such as Si-C, Si-O-C, and intercalated Si-O, at the coating/nanotube interface. The TGA reveals that the coating prevents the high-temperature oxidation and degradation of the nanotubes. The field emission characteristics of the coated, functionalized, and raw nanotubes show that the turn-on fields and current density are improved for the coated nanotubes. This improvement was attributed to the lowering of the work function and dielectric constant of the C/SiOx interface layer and the localization of the density of states close to the Fermi energy for the coated nanotubes. The analysis of the emission stability spectra shows that the coated nanotubes have a more favorable lifetime. The observed enhancement was attributed to the protection of the nanotubes from the reactive sputter etching during the field emission process. The details of the analysis are presented. (c) 2006 American Institute of Physics.
引用
收藏
页数:7
相关论文
共 37 条
[11]   Performance projections for ballistic carbon nanotube field-effect transistors [J].
Guo, J ;
Lundstrom, M ;
Datta, S .
APPLIED PHYSICS LETTERS, 2002, 80 (17) :3192-3194
[12]   Stability of silicon carbide structures: From clusters to solid surfaces [J].
Gutierrez, R ;
Frauenheim, T ;
Kohler, T ;
Seifert, G .
JOURNAL OF MATERIALS CHEMISTRY, 1996, 6 (10) :1657-1663
[13]   HIGH-PERFORMANCE OF HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES [J].
ITOH, A ;
KIMOTO, T ;
MATSUNAMI, H .
IEEE ELECTRON DEVICE LETTERS, 1995, 16 (06) :280-282
[14]   FTIR spectroscopy and FTIR microscopy of vacuum-evaporated polyimide thin films [J].
Karamancheva, I ;
Stefov, V ;
Soptrajanov, B ;
Danev, G ;
Spasova, E ;
Assa, J .
VIBRATIONAL SPECTROSCOPY, 1999, 19 (02) :369-374
[15]   SYMMETRY-BREAKING IN NITROGEN-DOPED AMORPHOUS-CARBON - INFRARED OBSERVATION OF THE RAMAN-ACTIVE G-BANDS AND D-BANDS [J].
KAUFMAN, JH ;
METIN, S ;
SAPERSTEIN, DD .
PHYSICAL REVIEW B, 1989, 39 (18) :13053-13060
[16]   FILLING CARBON NANOTUBES WITH SMALL PALLADIUM METAL CRYSTALLITES - THE EFFECT OF SURFACE ACID GROUPS [J].
LAGO, RM ;
TSANG, SC ;
LU, KL ;
CHEN, YK ;
GREEN, MLH .
JOURNAL OF THE CHEMICAL SOCIETY-CHEMICAL COMMUNICATIONS, 1995, (13) :1355-1356
[17]   The crystalline properties of carbon nitride nanotubes synthesized by electron cyclotron resonance plasma [J].
Lai, SH ;
Chen, YL ;
Chan, LH ;
Pan, YM ;
Liu, XW ;
Shih, HC .
THIN SOLID FILMS, 2003, 444 (1-2) :38-43
[18]   Schottky diode formation and characterization of titanium tungsten to n- and p-type 4H silicon carbide [J].
Lee, SK ;
Zetterling, CM ;
Ostling, M .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) :8039-8044
[19]   Electrical and field emission investigation of individual carbon nanotubes from plasma enhanced chemical vapour deposition [J].
Milne, WI ;
Teo, KBK ;
Chhowalla, M ;
Amaratunga, GAJ ;
Lee, SB ;
Hasko, DG ;
Ahmed, H ;
Groening, O ;
Legagneux, P ;
Gangloff, L ;
Schnell, JP ;
Pirio, G ;
Pribat, D ;
Castignolles, M ;
Loiseau, A ;
Semet, V ;
Binh, VT .
DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) :422-428
[20]   CONSTRUCTION OF TIGHT-BINDING-LIKE POTENTIALS ON THE BASIS OF DENSITY-FUNCTIONAL THEORY - APPLICATION TO CARBON [J].
POREZAG, D ;
FRAUENHEIM, T ;
KOHLER, T ;
SEIFERT, G ;
KASCHNER, R .
PHYSICAL REVIEW B, 1995, 51 (19) :12947-12957