Conductance and polarisability of C60 films

被引：7
作者：
Popok, V. N. [1 ]
Jonsson, M. [1 ]
Campbell, E. E. B. [1 ]
机构：
[1] Gothenburg Univ, Dept Phys, S-41296 Gothenburg, Sweden
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2007年 / 7卷 / 4-5期
关键词：
fullerene; conductance; polarisation; hysteresis; atomic force microscopy;
D O I：
10.1166/jnn.2007.325
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Thin films of C-60 deposited in vacuum are studied using current-voltage (I-V) measurements and atomic force microscopy (AFM). In situ electrical measurements give an average resistivity of ca. 30 M Omega cm for the as-deposited films at room temperature. The I-V dependences are found to correspond to ohmic behaviour but they have a hysteresis shape attributed to remnant polarisation due to the domain structure of the films. AFM images show a grainy surface morphology for the deposited C-60. Temperature dependent measurements in the range 290-365 K provide evidence for a variable range hopping mechanism of conductance with an activation energy of 0.8-1.0 ev. With further temperature increase the C-60 films restructure leading to an increase in grain size and a change of the electrical properties with I-V dependences showing Schottky barrier formation. The effect of oxygen on the conductance of the C-60 films under their exposure to an ambient atmosphere is considered and discussed.
引用
收藏
页码：1434 / 1438
页数：5
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