High-Quality All-Inorganic Perovskite CsPbBr3 Quantum Dots Emitter Prepared by a Simple Purified Method and Applications of Light-Emitting Diodes

被引:20
|
作者
Tien, Ching-Ho [1 ]
Chen, Lung-Chien [1 ]
Lee, Kun-Yi [2 ]
Tseng, Zong-Liang [3 ]
Dong, Yu-Shen [1 ]
Lin, Zi-Jun [1 ]
机构
[1] Natl Taipei Univ Technol, Dept Electroopt Engn, Taipei 10608, Taiwan
[2] China Univ Sci & Technol, Dept Elect Engn, Taipei 11581, Taiwan
[3] Ming Chi Univ Technol, Dept Elect Engn, New Taipei 24301, Taiwan
关键词
all-inorganic halide perovskite; quantum dots; perovskite CsPbBr3; quantum dot light-emitting diodes; ROOM-TEMPERATURE; ANION-EXCHANGE; OPTICAL-PROPERTIES; CSPBX3; X; NANOCRYSTALS; BR; LUMINESCENT; DEVICES; BRIGHT; CL;
D O I
10.3390/en12183507
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
High-quality perovskite CsPbBr3 quantum dots (QDs-CsPbBr3) were prepared using the ultrasonic oscillation method, which is simple and provides variable yield according to requirements. The emission spectra over a large portion of the visible spectral region (450-650 nm) of QD-CsPbX3 (X = Cl, Br, and I) have tunable compositions that can be halide exchanged using the halide anion exchange technique and quantum size-effects. A strong peak with high intensity of (200) lattice plane of purified QDs-CsPbBr3 film is obtained, confirming the formation of an orthorhombic perovskite crystal structure of the Pnma space group. The photoluminescence of QDs-CsPbBr3 was characterized using a narrow line-width emission of 20 nm, with high quantum yields of up to 99.2%, and radioactive lifetime increasing to 26 ns. Finally, through the excellent advantages of QDs-CsPbBr3 mentioned above, purified perovskite QDs-CsPbBr3 as an active layer was utilized in perovskite quantum dot light-emitting diodes structure applications. As a result, the perovskite QDs-CsPbBr3 light-emitting diodes (LEDs) exhibits a turn-on voltage of 7 V and a maximum luminance of 5.1 cd/m(2).
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页数:13
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