Investigation of {111} stacking faults and nanotwins in epitaxial BaTiO3 thin films by high-resolution transmission electron microscopy

被引：14

作者：

Lei, CH

Jia, CL

Siegert, M

Urban, K

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 2000年 / 80卷 / 06期

关键词：

D O I：

10.1080/095008300403503

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

{111} stacking faults and nanotwins in epitaxial BaTiO3 thin films on MgO substrates have been investigated by high-resolution transmission electron microscopy. In many cases, the stacking faults and nanotwins were found to be accompanied by partial dislocations. These partial dislocations can be classified as two different types, analogous to the situation in the fee structure. One is of the Shockley type with the Burgers vector (a/3)< 112 >. The other is of the Frank type with the Burgers vector (a/3)< 111 >. The movements of both types of partial can lead to the {111} stacking faults and the {111} twins observed in these films.

引用

页码：371 / 380

页数：10

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