Theoretical study of the effect of temperature differential and ionizing radiation on the current-voltage characteristics of HEM transistors

被引：0

作者：

Gudkov, A. G. ^{[1
]}

Tikhomirov, V. G. ^{[2
]}

Shub, B. R. ^{[3
]}

Vidyakin, S. I. ^{[1
]}

机构：

[1] Bauman Moscow State Tech Univ, Moscow 105005, Russia

[2] St Petersburg Electrotech Univ LETI, St Petersburg 197376, Russia

[3] Russian Acad Sci, Semenov Inst Chem Phys, Moscow 119991, Russia

来源：

RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY B | 2017年 / 11卷 / 01期

关键词：

HEMT; current-voltage characteristic; ionizing radiation; temperature differential; GaN; ALGAN/GAN HEMTS; HETEROSTRUCTURES; PARAMETERS;

D O I：

10.1134/S1990793117010225

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

Requirements to the modeling of the effects of temperature differential and ionizing radiation on the current-voltage characteristics of high electron mobility transistors (HEMTs) were formulated. The results of modeling of the effects of temperature differential on the current-voltage characteristics of HEMTs were described. The results of analysis of the effects of ionizing radiation on the current-voltage characteristics of HEMTs were given. The results of modeling of the effects of ionizing radiation on the current-voltage characteristics of HEMTs were presented.

引用

页码：112 / 117

页数：6

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