Structural and spectroscopic properties of AlN layers grown by MOVPE

被引：18

作者：

Thapa, S. B. ^{[1
]}

Kirchner, C.

Scholz, F.

Prinz, G. M.

Thonke, K.

Sauer, R.

Chuvilin, A.

Biskupek, J.

Kaiser, U.

Hofstetter, D.

机构：

[1] Univ Ulm, Optoelect Dept, D-89081 Ulm, Germany

[2] Univ Ulm, Semicond Phys Dept, D-89081 Ulm, Germany

[3] Univ Ulm, Electron Microscopy Grp Mat Sci, D-89081 Ulm, Germany

[4] Univ Neuchatel, Optoelect Grp, CH-2000 Neuchatel, Switzerland

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷 / 383-386期

关键词：

HRXRD; surface morphology; MOVPE; superlattice; AlN;

D O I：

10.1016/j.jcrysgro.2006.10.142

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effects on surface morphology, crystal quality, and growth rate of undoped AlN layers grown on c-plane sapphire substrates due to the changes in growth parameters, such as V-III ratio, N-2-H-2 ratio, and growth temperature in LP-MOVPE are studied here. The optimized growth process resulted in an almost flat surface morphology with a significantly reduced number of hexagonal pits (3 x 10(7) cm(-2)) and good crystalline quality having a rms value of roughness of 0.4 urn measured by atomic force microscopy and a high resolution X-ray diffraction (HRXRD) FWHM value for (0002) reflection of 200 aresecs. The threading dislocation density of the AlN layer is estimated approx. 10(9) cm(-2) from cross-sectional transmission electron microscopy (TEM) measurements. Additionally, these optimized samples show a strong donor-bound exciton luminescence signal with a FWHM of 20 meV. Furthermore, small period AlN/GaN superlattice structures with excellent uniformity were grown, as proven by our HRXRD and TEM studies. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：383 / 386

页数：4

共 16 条

[11] Growth of high-quality A1N with low pit density on SiC substrates [J].