Analysis of 45-nm multi-gate transistors behavior under heavy ion irradiation by 3-D device simulation

被引：16
作者：
Castellani-Coulie, K.
Munteanu, D.
Autran, J. L.
Ferlet-Cavrois, V.
Paillet, P.
Baggio, J.
机构：
[1] Univ Aix Marseille 1, L2MP, UMR 6137, CNRS, F-13384 Marseille 13, France
[2] Inst Univ France, Limoges, France
[3] CEA, DAM, DIF, F-91680 Bruyeres Le Chatel, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 06期
关键词：
bipolar gain; double-gate transistor; FinFET transistor; GAA transistor; MOSFET; SOI TECHNOLOGIES; BIPOLAR AMPLIFICATION; SEU; SENSITIVITY; MOSFETS; BULK;
D O I：
10.1109/TNS.2006.886205
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The sensitivity to heavy ions of three 45-nm multi-gate transistors is evaluated by 3-D simulation. An in depth investigation of main internal parameters is performed to study the electrical response of the different device architectures under irradiation. The obtained results are in agreement with the electrical behavior trends of these devices.
引用
收藏
页码：3265 / 3270
页数：6
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