Electrical and optical switching properties of ion implanted VO2 thin films

被引：32
|
作者：
Heckman, Emily M. [1 ,2 ]
Gonzalez, Leonel P. [1 ,2 ]
Guha, Shekhar [1 ]
Barnes, Jacob O. [1 ,2 ]
Carpenter, Amelia [1 ,2 ]
机构：
[1] USAF, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
[2] Gen Dynam Informat Technol, Dayton, OH 45430 USA
来源：
THIN SOLID FILMS | 2009年 / 518卷 / 01期
关键词：
Vanadium dioxide; Optical properties; Raman scattering; Electrical properties and measurements; VANADIUM-OXIDE FILMS; PHASE-TRANSITION; RAMAN-SCATTERING; DIOXIDE; TEMPERATURE;
D O I：
10.1016/j.tsf.2009.05.063
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The metal-insulator transition in vanadium dioxide thin films implanted with O+ ions was studied. Ion implantation lowered the metal-insulator transition temperature of the VO2 films by 12 degrees C compared to the unimplanted ones, as measured both optically and electrically. The lowering of the transition temperature was accomplished without significantly reducing the mid-wave infrared optical transmission in the insulating state for wavelengths >43 mu m. Raman spectroscopy was used to examine changes to the crystalline structure of the implanted films. The Raman spectra indicate that ion implantation effects are not annealed out for temperatures up to 120 degrees C. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：265 / 268
页数：4
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