Cr doped ZnO: Investigation of magnetic behaviour through SQUID and ESR studies

被引:5
作者
Amami, P. E. [1 ]
Das, J. [1 ,2 ]
Mishra, D. K. [3 ]
Srinivasu, V. V. [1 ]
Sahu, D. R. [4 ]
Roul, B. K. [5 ]
机构
[1] Univ South Africa, Coll Sci Engn & Technol, Dept Phys, ZA-1710 Johannesburg, South Africa
[2] Silicon Inst Technol, Dept Phys, Bhubaneswar 751024, Odisha, India
[3] Siksha O Anusandhan Deemed Univ, Fac Engn & Technol ITER, Dept Phys, Khandagiri Sq, Bhubaneswar 751030, Odisha, India
[4] Namibia Univ Sci & Technol, Dept Phys Nat & Appl Sci, Windhoek, Namibia
[5] Inst Mat Sci Agh, Planetarium Bldg, Bhubaneswar, Odisha, India
关键词
Semiconductors; Sintering; Photoluminescence spectroscopy; Raman spectroscopy; Electron spin resonance; RESONANT RAMAN-SCATTERING; ROOM-TEMPERATURE; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; FERROMAGNETISM; PHOTOLUMINESCENCE; NANORODS; GROWTH; SEMICONDUCTORS; DESIGN;
D O I
10.1016/j.physb.2019.07.056
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Polycrystalline Zn1-xCrxO (0.01 <= x <= 0.09) samples synthesised by solid state reaction technique were sintered at different temperatures following slow step sintering schedule, investigated for optical and magnetic properties using suitable characterisation techniques. Cr2O3 and CrO2 phases have been detected in the Raman spectra of Zn1-xCrxO samples with x >= 0.05. Photoluminescence study indicated improved optical property of the samples compared to undoped ZnO. While low percentage Cr doped samples show diamagnetic behaviour, different types of magnetic orderings are observed in the samples with higher percentage of dopants (x >= 0.05) for different sintering temperatures. The spin system and magnetic properties were analysed through Electron Spin Resonance study; g-value of 1.97 indicates Cr in 3+ valence state in ZnO. Presence of both Cr3+ and Cr4+ in ZnO understood to facilitate super exchange interactions to promote room temperature ferromagnetism. ESR study ensures improved magnetic homogeneity through slow step sintering process.
引用
收藏
页码:60 / 65
页数:6
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