Room temperature 633 nm tapered diode lasers with external wavelength stabilisation

被引：12

作者：

Blume, G. ^{[1
]}

Fiebig, C. ^{[1
]}

Feise, D. ^{[1
]}

Kaspari, C. ^{[1
]}

Sahm, A. ^{[1
]}

Paschke, K. ^{[1
]}

Erbert, G. ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

IET OPTOELECTRONICS | 2009年 / 3卷 / 06期

关键词：

HIGH-POWER; OUTPUT POWER; WAVE-GUIDE;

D O I：

10.1049/iet-opt.2009.0042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Small-sized modules that have an output power P > 100 mW with a spectral width < 0.25 pm at 15 degrees C are presented. The modules, aimed at HeNe laser applications, are stabilised at 632.8 nm with reflective volume Bragg gratings at the rear side of a tapered gain medium. The gain medium consists of AlGaInP layers grown on GaAs with metal-organic vapour-phase epitaxy, which allows for an emission between 629 and 636 nm in an external cavity configuration. Free running tapered lasers from the same material achieve a room temperature continuous wave emission P > 400 mW near 633 nm and operate for more than 1000 h at 200 mW.

引用

页码：320 / 325

页数：6

共 20 条

[11] High power 635 nm low-divergence ridge waveguide singlemode lasers
Lu, B
Osinski, JS
Vail, E
Pezeshki, B
Schmitt, B
Lang, RJ
[J]. ELECTRONICS LETTERS, 1998, 34 (03) : 272 - 273
[12] Wavelength-Stabilized Compact Diode Laser System on a Microoptical Bench With 1.5-W Optical Output Power at 671 nm
Maiwald, Martin
Ginolas, Arnim
Mueller, Andre
Sahm, Alexander
Sumpf, Bernd
Erbert, Goetz
Traenkle, Guenther
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (17-20) : 1627 - 1629
[13] Microsystem 671 nm light source for shifted excitation Raman difference spectroscopy
Maiwald, Martin
Schmidt, Heinar
Sumpf, Bernd
Erbert, Goetz
Kronfeldt, Heinz-Detlef
Traenkle, Guenther
[J]. APPLIED OPTICS, 2009, 48 (15) : 2789 - 2792
[14] High power continuous-wave operation of 630 nm-band laser diode arrays
Osinski, JS
Lu, B
Zhao, H
Schmitt, B
[J]. ELECTRONICS LETTERS, 1998, 34 (24) : 2336 - 2337
[15] High power and diffraction-limited red lasers
Pezeshki, B
Hagberg, M
Lu, B
Zelinski, M
Zou, S
Kolev, E
[J]. IN-PLANE SEMICONDUCTOR LASERS IV, 2000, 3947 : 80 - 90
[16] Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers
Ressel, P
Erbert, G
Zeimer, U
Häusler, K
Beister, G
Sumpf, B
Klehr, A
Tränkle, G
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (05) : 962 - 964
[17] Thermal properties and degradation behavior of red-emitting high-power diode lasers
Tien, Tran Quoc
Weik, Fritz
Tomm, Jens W.
Sumpf, Bernd
Zorn, Martin
Zeimer, Ute
Erbert, Goetz
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (18)
[18] SS-MBE grown short red wavelength range AlGaInP laser structures
Toikkanen, L
Dumitrescu, M
Tukiainen, A
Viitala, S
Suominen, M
Erojärvi, V
Rimpiläinen, V
Rönkkö, R
Pessa, M
[J]. SEMICONDUCTOR LASERS AND LASER DYNAMICS, 2004, 5452 : 199 - 205
[19] Microexternal cavity tapered lasers at 670 nm with 5 W peak power and nearly diffraction-limited beam quality
Tran Quoc Tien
Maiwald, Martin
Sumpf, Bernd
Erbert, Goetz
Traenkle, Guenther
[J]. OPTICS LETTERS, 2008, 33 (22) : 2692 - 2694
[20] High-power red laser diodes grown by MOVPE
Zorn, M.
Wenzel, H.
Zeimer, U.
Sumpf, B.
Erbert, G.
Weyers, M.
[J]. JOURNAL OF CRYSTAL GROWTH, 2007, 298 (SPEC. ISS) : 667 - 671

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