Room temperature 633 nm tapered diode lasers with external wavelength stabilisation

被引：12

作者：

Blume, G. ^{[1
]}

Fiebig, C. ^{[1
]}

Feise, D. ^{[1
]}

Kaspari, C. ^{[1
]}

Sahm, A. ^{[1
]}

Paschke, K. ^{[1
]}

Erbert, G. ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

IET OPTOELECTRONICS | 2009年 / 3卷 / 06期

关键词：

HIGH-POWER; OUTPUT POWER; WAVE-GUIDE;

D O I：

10.1049/iet-opt.2009.0042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Small-sized modules that have an output power P > 100 mW with a spectral width < 0.25 pm at 15 degrees C are presented. The modules, aimed at HeNe laser applications, are stabilised at 632.8 nm with reflective volume Bragg gratings at the rear side of a tapered gain medium. The gain medium consists of AlGaInP layers grown on GaAs with metal-organic vapour-phase epitaxy, which allows for an emission between 629 and 636 nm in an external cavity configuration. Free running tapered lasers from the same material achieve a room temperature continuous wave emission P > 400 mW near 633 nm and operate for more than 1000 h at 200 mW.

引用

页码：320 / 325

页数：6

共 20 条

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