Fabrication and characterization of a quasi-phase-matched GaP optical device for terahertz-wave generation

被引：13
作者：
Tomita, Isao [1 ]
机构：
[1] NTT Photon Lab, Atsugi, Kanagawa 2430198, Japan
来源：
OPTICAL MATERIALS | 2009年 / 32卷 / 02期
关键词：
Nonlinear optics; Optical frequency converters; Semiconductor materials; DIFFERENCE-FREQUENCY-GENERATION; P-GE; CRYSTAL; LASER; COHERENT; GAAS; SEMICONDUCTORS; RECTIFICATION; RADIATION; EMISSION;
D O I：
10.1016/j.optmat.2009.08.011
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A method of fabricating a quasi-phase-matched optical device with GaP for terahertz (THz)-wave generation is described, and its generation at I and 2.6 THz is demonstrated by employing difference-frequency generation pumped at 1.55 mu m. The enhancement of the Output THz-wave power due to the quasi-phase-matching effect is confirmed, and an order of magnitude larger output efficiency than that of an ordinary quasi-phase-matched device fabricated with LiNbO3 is obtained. Some important factors that affect the output characteristics of the GaP device are also discussed. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：323 / 328
页数：6
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