CuTCNQ resistive nonvolatile memories with a noble metal bottom electrode

被引：47
|
作者：
Muller, R. [1 ]
Naulaerts, R. [1 ]
Billen, J. [1 ]
Genoe, J. [1 ]
Heremans, P. [1 ]
机构：
[1] IMEC VZW, B-3001 Heverlee, Belgium
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 06期
关键词：
D O I：
10.1063/1.2457342
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Resistive electrical switching of the organic semiconductor Cu-tetracyanoquinodimethane (CuTCNQ) was investigated between gold bottom and aluminum top contacts. Corresponding Au/CuTCNQ/Al crossbar memories achieved several thousand write/erase cycles. The switching process was further studied by current-time measurements, and temperature-dependent measurements of the on state conductivity. (c) 2007 American Institute of Physics.
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页数：3
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