CuTCNQ resistive nonvolatile memories with a noble metal bottom electrode

被引：47

作者：

Muller, R. ^{[1
]}

Naulaerts, R. ^{[1
]}

Billen, J. ^{[1
]}

Genoe, J. ^{[1
]}

Heremans, P. ^{[1
]}

机构：

[1] IMEC VZW, B-3001 Heverlee, Belgium

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 06期

关键词：

D O I：

10.1063/1.2457342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resistive electrical switching of the organic semiconductor Cu-tetracyanoquinodimethane (CuTCNQ) was investigated between gold bottom and aluminum top contacts. Corresponding Au/CuTCNQ/Al crossbar memories achieved several thousand write/erase cycles. The switching process was further studied by current-time measurements, and temperature-dependent measurements of the on state conductivity. (c) 2007 American Institute of Physics.

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页数：3

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