Experimental analysis of punch-through conditions in power P-I-N diodes

被引：14

作者：

Ben Salah, Tarek ^{[1
]}

Buttay, Cyril

Allard, Bruno

Morel, Herve

Ghedira, Sami

Besbes, Kamel

机构：

[1] Inst Natl Sci Appl, Ctr Genie Elect Lyon, F-69621 Villeurbanne, France

[2] Lab Microelect & Instrumentat, Monastir, Tunisia

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2007年 / 22卷 / 01期

关键词：

avalanche; p-type; intrinsic; n-type (P-I-N) diode; punch-through (PT); reverse-recovery;

D O I：

10.1109/TPEL.2006.886648

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Commercial power diodes are optimized to feature punch-through behavior. However, a tradeoff between the width and the doping level of the diode epitaxial layer leads to various levels of optimization. For a given breakdown voltage, a shorter epitaxial layer width leads to better transient performances. Device datasheets do not cover this issue and a simple experimental setup is presented to assess the optimization conditions inside the diode epitaxial layer. Three commercial devices are tested and experimental results are confronted to device simulations. A good agreement is found.

引用

页码：13 / 20

页数：8

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