Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure

被引：15
作者：
Mora-Ramos, M. E.
Duque, C. A.
机构：
[1] Univ Autonoma Estados Morelos, Fac Ciencias, Cuernavaca, Morelos, Mexico
[2] Univ Autonoma Estados Morelos, Inst Fis, Cuernavaca, Morelos, Mexico
来源：
BRAZILIAN JOURNAL OF PHYSICS | 2006年 / 36卷 / 3B期
关键词：
GaAs; delta-doping; hydrostatic pressure;
D O I：
10.1590/S0103-97332006000600018
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The calculation of the electronic energy levels of n-type delta-doped quantum wells in a GaAs matrix is presented. The effects of hydrostatic pressure on the band structure are taken into account specially when the host material becomes an indirect gap one. The results suggest that under the applied pressure regime the GaAs can support two-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 10(13) cm(-2)
引用
收藏
页码：866 / 868
页数：3
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